Tartu ÜlikoolKaasik, J., toimetaja2013-08-052013-08-051993Per.A-1169http://hdl.handle.net/10062/32139• J.Aarik, A.Jaek, A.-A.Kiisler, V.Sammelselg. Composition of oxide films grown by ALE from AICI3 and H2O • J.Aarik, A.Aidla, A.Jaek, A.-A.Kiisler. Time delays in flow-type atomic layer epitaxy reactor • J.Friedenthal, H.Koppel, T.Uustare. AP-MOCVD layer growth of ZnO in the H2-Zn(C2H5)2-C02 system • V.Seeman, L. Pung, M.Danilkin, M.Kerikmäe. V-centres in plastically deformed CaS • H. Siimon, T. Uustare, J. Lembra. ALE model considering the surface structure of the growing binary compound • H. Siimon, T. Uustare, J. Lembra. Kinetics of cyclic deposition of a binary compound • J. Aarik, H. Siimon. Growth rate and source material utilization efficiency in MBE under conventional and ALE conditions • Rammo, J. Kaasik, M. Lepist, L. Matisen, A.-A. Tammik. E.Vilt. Investigation of SrS-Ce photoluminescence excited by short pulsesenjätkväljaandedTartu ÜlikoolelektroluminestsentsluminestsentsmaterjalidkristallikasvatusartiklikogumikudBook